Decreased Fast Time Scale Spectral Diffusion of a Nonpolar InGaN Quantum Dot
نویسندگان
چکیده
Spectral diffusion can lead to considerable broadening of the line width nitride quantum dots. Here, InGaN dots grown on a nonpolar plane were shown exhibit decreased spectral rate compared polar A robust intensity correlation method was used measure six maximum time 1170 ± 50 ns found. An increase with increasing power observed. The internal field leads lifetime for that is shorter than dots; important ratio more favorable dots, thereby chances generating indistinguishable photons.
منابع مشابه
Simulations of laser diodes with nonpolar InGaN multi?quantum?wells
p s s current topics in solid state physics
متن کاملA fast wallace-based parallel multiplier in quantum-dot cellular automata
Physical limitations of Complementary Metal-Oxide-Semiconductors (CMOS) technology at nanoscale and high cost of lithography have provided the platform for creating Quantum-dot Cellular Automata (QCA)-based hardware. The QCA is a new technology that promises smaller, cheaper and faster electronic circuits, and has been regarded as an effective solution for scalability problems in CMOS technolog...
متن کاملOptical Properties and Modal Gain of InGaN Quantum Dot Stacks
We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasin...
متن کاملInfluence of carrier statistics on InGaN quantum dot device performance
In this work InGaN quantum dots (QDs) in GaN matrix formed during strain induced phase separation were investigated. We show that although electron – photon interaction rate in residual quantum well (QW) InGaN is high, carrier capture to QD levels and carrier escape from QD levels to the QW is slowed presumably due to large energy distance between the QD levels and between the QD levels and the...
متن کاملA fast wallace-based parallel multiplier in quantum-dot cellular automata
Physical limitations of Complementary Metal-Oxide-Semiconductors (CMOS) technology at nanoscale and high cost of lithography have provided the platform for creating Quantum-dot Cellular Automata (QCA)-based hardware. The QCA is a new technology that promises smaller, cheaper and faster electronic circuits, and has been regarded as an effective solution for scalability problems in CMOS technolog...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ACS Photonics
سال: 2021
ISSN: ['2330-4022']
DOI: https://doi.org/10.1021/acsphotonics.1c01613